Electrical and optical enhancement of ITO/Mo bilayer thin films via laser annealing

• Abdelbaki Hacini,
• Ahmad Hadi Ali,
• Nurul Nadia Adnan and
• Nafarizal Nayan

Beilstein J. Nanotechnol. 2022, 13, 1589–1595, doi:10.3762/bjnano.13.133

• AFM analysis shows that grain size and RMS roughness increased from 16.02 to 36.19 nm and 0.4 to 2.6 nm, respectively, when the laser energy was increased to 120 mJ. The as-deposited sample has an optical transmittance of nearly 80% in the 300–800 nm range. The laser annealing yielded a higher

• 17.6 × 10−3 Ω−1 of the the annealed structure. The results indicate that the laser annealing could improve the efficiency of the transparent conductive layer, which can be potentially applied in optoelectronic devices. Keywords: indium tin oxide (ITO); laser annealing; molybdenum (Mo); Nd:YAG

• thin film’s quality [9]. Conventional annealing treatment requires long periods of time and high temperatures during operation [24]. This led to the search for new methods using lower temperatures and shorter process times. Laser annealing can fulfil these requirements [24][25][26]. During laser

Size limits of magnetic-domain engineering in continuous in-plane exchange-bias prototype films

• Alexander Gaul,
• Daniel Emmrich,
• Timo Ueltzhöffer,
• Henning Huckfeldt,
• Hatice Doğanay,
• Johanna Hackl,
• Muhammad Imtiaz Khan,
• Daniel M. Gottlob,
• Gregor Hartmann,
• André Beyer,
• Dennis Holzinger,
• Slavomír Nemšák,
• Claus M. Schneider,
• Armin Gölzhäuser,
• Günter Reiss and
• Arno Ehresmann

Beilstein J. Nanotechnol. 2018, 9, 2968–2979, doi:10.3762/bjnano.9.276

• ][20][21], laser annealing [22][23][24], thermally assisted scanning probe lithography [25], or a combination of spatially broad laser- or ion-beams and shadow masks [26][27][28][29][30]. Especially in magnonic [14] and sensor applications [4] in-plane magnetic domain patterns play a key role and are

• assisted scanning probe lithography [25] or 250 nm wide dots fabricated by direct interferometric laser annealing [34]. Local annealing, however, results in three-dimensional temperature gradients within the magnetic film causing thermal diffusion and material intermixing over several hundreds of

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si_1−xGe_x and Si layers

• Richard Daubriac,
• Emmanuel Scheid,
• Hiba Rizk,
• Richard Monflier,
• Sylvain Joblot,
• Rémi Beneyton,
• Pablo Acosta Alba,
• Sébastien Kerdilès and
• Filadelfo Cristiano

Beilstein J. Nanotechnol. 2018, 9, 1926–1939, doi:10.3762/bjnano.9.184

• thick SiGe test structure fabricated by CVD and uniformly doped in situ during growth. The developed method is finally applied to the investigation of dopant activation achieved by advanced annealing methods (including millisecond and nanosecond laser annealing) in two material systems: 6 nm thick

• mobility; contact resistance; differential Hall effect; dopant activation; fully depleted silicon on insulator (FDSOI); laser annealing; sub-nanometre resolution; Introduction The research efforts made throughout the last decades have made it possible to keep the momentum for a continuous miniaturization

• these measurements, we can therefore conclude that the DHE method we have developed for the investigation of SiGe is consistent. Results and Discussion Study of a 6 nm boron-doped SiGeOI layer Within the recent development of the 3D-sequential integration technology at CEA-LETI, laser annealing is being

Growth, structure and stability of sputter-deposited MoS₂ thin films

• Reinhard Kaindl,
• Bernhard C. Bayer,
• Roland Resel,
• Thomas Müller,
• Viera Skakalova,
• Gerlinde Habler,
• Rainer Abart,
• Alexey S. Cherevan,
• Dominik Eder,
• Maxime Blatter,
• Fabian Fischer,
• Jannik C. Meyer,
• Dmitry K. Polyushkin and
• Wolfgang Waldhauser

Beilstein J. Nanotechnol. 2017, 8, 1115–1126, doi:10.3762/bjnano.8.113

• heating to elevated temperatures in ambient atmosphere [30]. In order to study the stability of our PVD MoS2 films, we employed in situ laser annealing [39][40] in ambient air coupled with Raman spectroscopic investigations (Figure 4). We employed a low laser power (0.75 µW) to non-destructively probe the

• annealing conditions. Our in situ laser annealing experiments therefore show that the amorphous MoS2 films deposited at RT are very unstable and easily oxidized upon increased energy input in ambient air whereas nanocrystalline films deposited at 400 °C remain comparatively stable in ambient conditions when

• . X-ray wavelength λ = 0.1518 nm. (a) Specular XRD patterns of MoS2 films (≈10 nm) deposited at RT and 400 °C. (b,c) GIXD images of MoS2 films (≈100 nm) deposited at (b) RT and (c) at 400 °C. (a) In situ laser annealing Raman spectra of MoS2 thin films, deposited at RT (bottom panel) and 400 °C (top

Investigation of growth dynamics of carbon nanotubes

• Marianna V. Kharlamova

Beilstein J. Nanotechnol. 2017, 8, 826–856, doi:10.3762/bjnano.8.85

3D Nanoprinting via laser-assisted electron beam induced deposition: growth kinetics, enhanced purity, and electrical resistivity

• Brett B. Lewis,
• Robert Winkler,
• Xiahan Sang,
• Pushpa R. Pudasaini,
• Michael G. Stanford,
• Harald Plank,
• Raymond R. Unocic,
• Jason D. Fowlkes and
• Philip D. Rack

Beilstein J. Nanotechnol. 2017, 8, 801–812, doi:10.3762/bjnano.8.83

• (BF) STEM imaging was used to analyze the structure of the nanoscale deposits before and after laser annealing. EELS was performed in order to determine the structure of carbon through analysis of the carbon K-edge. Electrical device fabrication and measurements A two-contact electrical test structure

• cause the increased grain coarsening, thermal simulations (see below) reveal that the longer total length of the pillars at higher dwell times is the dominant factor. EELS was performed to determine the influence of the laser annealing treatment on the evolution of the carbon structure contained within

Laser irradiation in water for the novel, scalable synthesis of black TiO_x photocatalyst for environmental remediation

• Massimo Zimbone,
• Giuseppe Cacciato,
• Mohamed Boutinguiza,
• Vittorio Privitera and
• Maria Grazia Grimaldi

Beilstein J. Nanotechnol. 2017, 8, 196–202, doi:10.3762/bjnano.8.21

• appears similar to the case of irradiation under 1064 nm wavelength [22]. However, in the present condition, the holes on the surface of the irradiated sample appear to be concentrated at the grain boundaries generated on the surface by the laser annealing. RBS spectra clearly show the presence of oxygen

Formation of pure Cu nanocrystals upon post-growth annealing of Cu–C material obtained from focused electron beam induced deposition: comparison of different methods

• Aleksandra Szkudlarek,
• Alfredo Rodrigues Vaz,
• Yucheng Zhang,
• Andrzej Rudkowski,
• Czesław Kapusta,
• Rolf Erni,
• Stanislav Moshkalev and
• Ivo Utke

Beilstein J. Nanotechnol. 2015, 6, 1508–1517, doi:10.3762/bjnano.6.156

• variation of the atomic ratio with annealing was found. Energy dispersive X-ray measurements of the deposit shown in Figure 4a and Figure 4bgave an atomic ratio of Cu/C/O/F = 9:52:32:6 for the as-grown FEBID material which changed to Cu/C/O/F = 10:66:23:0.6 after laser annealing. Considering the error

• limits of 2 atom % there is no fundamental difference to the trends and absolute values for Cu stated for conventional annealing. The Cu/C = 1:6.6 ratio after laser annealing of 1 min at around 158 °C (see section Experimental) is smaller than for thermal annealing, however, time and annealing

• during in situ TEM analysis. Conventional and IR laser annealing experiments were combined with in situ four-point probe resistance measurements. TEM of as-deposited lines and squares from Cu(hfac)2 on an amorphous carbon membrane on a TEM grid. a) An overview of deposits, b) zoom into a line deposit, c

Electron-stimulated purification of platinum nanostructures grown via focused electron beam induced deposition

• Brett B. Lewis,
• Michael G. Stanford,
• Jason D. Fowlkes,
• Kevin Lester,
• Harald Plank and
• Philip D. Rack

Beilstein J. Nanotechnol. 2015, 6, 907–918, doi:10.3762/bjnano.6.94

• ambients have been shown to improve the purity in PtCx deposits from the MeCpPt(IV)Me3 precursor and AuCx deposits from the Me2Au(acac) precursor [14]. Recently, pulsed laser annealing of PtCx deposits in O2 was also successful in fully photo-thermally inducing a C–O reaction to remove the carbon matrix

Nanostructuring of GeTiO amorphous films by pulsed laser irradiation

• Valentin S. Teodorescu,
• Cornel Ghica,
• Adrian V. Maraloiu,
• Mihai Vlaicu,
• Andrei Kuncser,
• Magdalena L. Ciurea,
• Ionel Stavarache,
• Ana M. Lepadatu,
• Nicu D. Scarisoreanu,
• Andreea Andrei,
• Valentin Ion and
• Maria Dinescu

Beilstein J. Nanotechnol. 2015, 6, 893–900, doi:10.3762/bjnano.6.92

• the formation of amorphous Ge nanoparticles through the segregation of Ge atoms in the GeTiO matrix. The nanostructuring effects induced by the laser irradiation can be used in functionalizing the surface of the films. Keywords: fast diffusion; GeTiO film; nanostructuring; pulsed laser annealing

• greater than the laser radiation absorption length, the laser annealing takes place only in a surface layer of the film, and a gradual modification of the nanostructure or a crystallization can be induced in the film [18][19]. The surface heating of the film during the laser pulse action can be estimated

• rutile phase). If annealing is performed at 700 °C, the (GeTi)O2 rutile phase decomposes and a layer of GeO2 nanocrystallites appears on the film surface. This clearly shows that Ge diffuses out of the film as GeO. In the case of laser annealing (irradiation), a fraction of Ge escapes from the top

Nanoporous Ge thin film production combining Ge sputtering and dopant implantation

• Jacques Perrin Toinin,
• Alain Portavoce,
• Khalid Hoummada,
• Michaël Texier,
• Maxime Bertoglio,
• Sandrine Bernardini,
• Marco Abbarchi and
• Lee Chow

Beilstein J. Nanotechnol. 2015, 6, 336–342, doi:10.3762/bjnano.6.32

• for the fabrication of nanocrystals by dewetting, such as metals or semiconductors. In addition, the structure of the dewetted layers can be controlled using several techniques such as pulsed laser annealing [35][36] or a substrate patterned by focused ion beam. The study of Ge dewetting on SiO2 [37

Properties of plasmonic arrays produced by pulsed-laser nanostructuring of thin Au films

• Katarzyna Grochowska,
• Katarzyna Siuzdak,
• Peter A. Atanasov,
• Carla Bittencourt,
• Anna Dikovska,
• Nikolay N. Nedyalkov and
• Gerard Śliwiński

Beilstein J. Nanotechnol. 2014, 5, 2102–2112, doi:10.3762/bjnano.5.219

• characterized by a short-distance order (length scale ≈140 nm). For the NP shapes produced, an observably broader tuning range (of about 150 nm) of the surface plasmon resonance (SPR) band is obtained by renewal thin film deposition and laser annealing of the NP array. Despite the broadened SPR bands, which

• the plasmon resonance peak resulting from repeated film deposition and laser annealing observed for the first time is reported. Results and Discussion Nanoparticle structures The photothermally stimulated patterning path from a thin metal film to a nanostructured array of particles is initiated by

Manipulation of nanoparticles of different shapes inside a scanning electron microscope

• Boris Polyakov,
• Sergei Vlassov,
• Leonid M. Dorogin,
• Jelena Butikova,
• Mikk Antsov,
• Sven Oras,
• Rünno Lõhmus and
• Ilmar Kink

Beilstein J. Nanotechnol. 2014, 5, 133–140, doi:10.3762/bjnano.5.13

• morphology of Ag NPs was determined by the conditions of the laser annealing of the target nanowires [21][22]. At a relatively small laser pulse energy, rounded structures formed on both ends of nanowires (Figure 3a). At a higher pulse energy the whole NW melted into separated round NPs due to Plateau

• (150 nm) of different shape as deposited from a solution. High resolution SEM images of Ag nanowires (diameter 120 nm) after pulsed laser annealing (a). Ag NPs of different size produced by laser annealing (b). Different models for the estimation of the contact area: facet area of a polyhedron for Au

Flash laser annealing for controlling size and shape of magnetic alloy nanoparticles

• Damien Alloyeau,
• Christian Ricolleau,
• Cyril Langlois,
• Yann Le Bouar and
• Annick Loiseau

Beilstein J. Nanotechnol. 2010, 1, 55–59, doi:10.3762/bjnano.1.7

• ONERA / CNRS, BP 72, 92322 Châtillon Cedex, France 10.3762/bjnano.1.7 Abstract We propose an original route to prepare magnetic alloy nanoparticles with uniform size and shape by using nanosecond annealing under pulsed laser irradiation. As demonstrated here on CoPt nanoparticles, flash laser annealing

• ; nanosecond pulsed laser annealing; order-disorder transformation; Introduction Future high-density recording systems require 10 nm magnetic grains with a high magnetic anisotropy (Ku) to insure their thermal stability [1]. CoPt and FePt nanoparticles (NPs) in the chemically ordered L10 structure [2] are

• effects are obtained with CoPt thin films near the percolation threshold, indicating that the morphological transformations does not depend on the as-grown film morphology. If flash laser annealing experiments always result in spherical and monodisperse NPs, the nominal thickness of the as-grown film can